Episil Technologies has established a completed Silicon Carbide foundry line on 4" and 6" with dedicated tools for SiC Processing, e.g. High Temperature Anneal up to 1,900°C , High Temperature Implant up to 500°C , dedicated Gate Oxide Furnace, SiC Wafer Thinning, Backside Laser Anneal, etc. EpiSil Technologies provides verified process platform of both SiC- Shottky diode and SiC- MOSFET for customers design-in, and do available to co-develop for customized process. Except the foundry services for fabless design houses, Episil technologies is also capable for IDMs who looks for outside second source solution.

●　HEMT Process List