Product Technology

Bipolar Process
GaN Process
SiC Process


With our extensive development and manufacturing experience in Bipolar field, Episil is continuously developing a new series of processes to satisfy the diverse demands of customers.

“A” series, 5μm BJT processes, are categorized by transistor breakdown voltage (BVCEO). Besides its basic BJT functions, Episil also offers customers several option layers, (e.g., implant resistor, capacitor and deep p+) for special requirements.

“C” series, 1.5μm BJT processes, are developed to minimize the device size by utilizing 1.5μm design rule and double buried layers. The cutoff frequency of NPN transistor made by this process can reach 2.5GHz, and an ultra flat zone of Hfe for Ic=1nA to 1mA is also achieved. These processes are widely used in power management (Linear and Switching Mode), motor control, optical sensor, low dropout (LDO) and Hall sensor, etc.

  • Process List
  • 5um : A010, A020, A020B, A030, A040, A040B
  • 1.5um : C005, C012, C012B, C020, C025, C025B, C030


Episil offers 6 inch GaN foundry service since 2009. We offer GaN/Si epi and E-mode HEMT process in one step shopping. It is a high quality compact process which provide a high performance and cost-effective process platform.

  • HEMT Process List
  • E-Mode GaN FET : 0.5um /30V ~350V
  • E-Mode GaN IC : 0.5um ~100V
  • The E-mode process platform is exclusive process for specific customer only.

SiC Process

Episil Technologies has established a completed Silicon Carbide foundry line on 4" and 6" with dedicated tools for SiC Processing, e.g. High Temperature Anneal up to 1,900°C , High Temperature Implant up to 500°C , dedicated Gate Oxide Furnace, SiC Wafer Thinning, Backside Laser Anneal, etc. EpiSil Technologies provides verified process platform of both SiC- Shottky diode and SiC- MOSFET for customers design-in, and do available to co-develop for customized process. Except the foundry services for fabless design houses, Episil technologies is also capable for IDMs who looks for outside second source solution.

TVS Process
FRED Process
FRMOS Process

TVS Process

The trench isolation process have the advantage of reducing chip area, lower capacitance characteristic, and reducing lateral current leakage. It could provide the flexibility of chip design if designer would like to combines other optional process (for example: BJT base TVS, Diode base TVS, etc.).

The deep trench isolation (DTI) process and shallow trench isolation (STI) process, both are available in Episil. The trench depth is from 1um (minimum depth of STI process) to 2240um (maximum depth of DTI process).

Special Resistivity/Structure Epi Layer

Through deep cooperation with Episil-Precision, Episil can offer special resistivity Epitaxy layers which can be embedded to normal TVS process. Such special process can provide the design flexibility for low capacitance, low Ron applications.

FRED Process

Episil offers 6“ 200V~1200V FRD foundry service. FRD stands for fast recovery diodes. They offer high-speed support and generally have a Trr of approximately 40 to 120ns. They are used in various automobile industries, high-speed DC to DC converters, high-speed analog and digital communication. We offer epitaxy and process manufacturing capability with lower and stable Trr performance in one stop shopping.

There are completed backend processes available, including back grinding, back metal evaporation. We provide wafer level test by WAT and CP.

FRMOS Process

Episil offers high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. These diodes are used in rectifier especially for high-frequency rectification. They are used in electronics circuits in various industries and automobile sector. In analogue and digital communication circuit these diodes are extensively used for rectification and modulation purpose.

     Trr(ns)* 1.7A 2A 5A 7A
STD 70 600/650V 500/600V 500/600V 500/600V
Super Fast 65 600V 500/600V 500/600V 500/600V
Ultra Fast 40   500/600V 500/600V 500/600V

* If=1A, Di/Dt=50A/us, Vr=30V